公开(公告)号：US08748266B2

公开(公告)日：2014-06-10

申请号：US13291999

申请日：2011-11-08

Applicant: Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

Inventor： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC: H01L21/336

CPC classification number: H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract translation: 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的方向的深度方向上的第一导电类型的半导体层的主表面形成沟槽， 在沟槽的内表面上形成包括热氧化膜和沉积膜的栅极绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成 用作沟道形成区域的第二导电类型的半导体区域，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US20110310202A1

公开(公告)日：2011-12-22

申请号：US13165098

申请日：2011-06-21

Applicant: Yojiro Kojima ,  Yukako Tamanuki ,  Shogo Takemoto ,  Satoshi Kudo ,  Yoshio Kinoshita ,  Kumiko Mafune

Inventor： Yojiro Kojima ,  Yukako Tamanuki ,  Shogo Takemoto ,  Satoshi Kudo ,  Yoshio Kinoshita ,  Kumiko Mafune

IPC: B41J2/01

CPC classification number: B41J2/165

Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.

Abstract translation: 一种喷墨记录方法包括：图像形成步骤，通过从喷墨记录头喷射油墨而在具有油墨接收层的记录介质上形成图像;以及加湿步骤，用于加湿记录头和记录介质之间的间隙 ，其中在图像形成步骤中，使用含有由通式（I）表示的特定染料和无机 - 有机平衡值为1.4以上至2.7以下的水溶性有机化合物的油墨。

公开(公告)号：US20100173461A1

公开(公告)日：2010-07-08

申请号：US12724323

申请日：2010-03-15

Applicant: Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

Inventor： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC: H01L21/336

CPC classification number: H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract translation: 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US20100162947A1

公开(公告)日：2010-07-01

申请号：US12647634

申请日：2009-12-28

Applicant: Kazuhiro HARADA ,  Satoshi KUDO

Inventor： Kazuhiro HARADA ,  Satoshi KUDO

IPC: C30B11/00

CPC classification number: C30B15/10

Abstract: A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.

Abstract translation: 用于提取硅单晶并由原料由天然二氧化硅制成的二氧化硅玻璃坩埚设置有从坩埚底部的中心到内表面至多0.5mm深的一定范围内的区域， 其基本上不包括气泡，其中包括在从坩埚的底部的中心到距内表面的0.5mm深的一定范围内的区域中的浓度的平均值为30ppm以上 和150ppm以下。 在以这种方式形成坩埚底部的内层的情况下，防止了内表面的凹陷，并且气泡的产生减少。

公开(公告)号：US07425059B2

公开(公告)日：2008-09-16

申请号：US10566173

申请日：2005-04-19

Applicant: Kiyomitsu Kudo ,  Akira Tsujimoto ,  Satoshi Kudo ,  Toru Suzuki

Inventor： Kiyomitsu Kudo ,  Akira Tsujimoto ,  Satoshi Kudo ,  Toru Suzuki

IPC: B41J2/175

CPC classification number: B41J2/17509 ,  B41J2/17513 ,  B41J2/1752 ,  B41J2/20

Abstract: The present invention solves problems attributable to color mixing occurring at a region where an ink container containing three or more different inks and an inkjet printing head are connected as a result of repetition of connection and disconnection of the components. An ink cartridge has a joint section which is connected to a printing head unit when the inks are supplied to the printing head unit. The printing head unit performs printing by ejecting the cyan, magenta, and yellow inks. At the joint section, a supplying part for the cyan ink, a supplying part for the magenta ink, and a supplying part for the yellow ink are arranged in the order listed. The interval between the yellow ink supplying part and the magenta ink supplying part is greater than the interval between the cyan ink supplying part and the magenta ink supplying part.

Abstract translation: 本发明解决了由于重复连接和断开组件而导致在包含三种或更多种不同油墨的墨水容器和喷墨打印头连接的区域上发生的颜色混合的问题。 墨盒具有接合部分，当将油墨供应到打印头单元时，其连接到打印头单元。 打印头单元通过喷射青色，品红色和黄色墨水来执行打印。 在接头部分，按照列出的顺序布置用于青色墨水的供应部分，用于品红色墨水的供应部分和用于黄色墨水的供应部件。 黄色供墨部分和品红色墨水供应部分之间的间隔大于青色墨水供应部分和品红色墨水供应部分之间的间隔。

公开(公告)号：US20070196446A1

公开(公告)日：2007-08-23

申请号：US11788952

申请日：2007-04-23

Applicant: Satoshi Kudo ,  Naomi Mizusawa ,  Mahoko Hamura

Inventor： Satoshi Kudo ,  Naomi Mizusawa ,  Mahoko Hamura

IPC: A61K47/00 ,  A61K31/22 ,  C07C57/00 ,  A61K9/48 ,  A61K9/22

CPC classification number: A23C9/1234 ,  A23C9/1238 ,  A23C9/1528 ,  A23C11/103 ,  A23C11/106 ,  A23D9/00 ,  A23L33/115 ,  A23L33/12 ,  A23V2002/00 ,  A61K9/0095 ,  A61K9/1647 ,  A61K9/2018 ,  A61K9/4858 ,  A61K31/202 ,  A61K31/22 ,  A61K31/231 ,  A61K31/232 ,  A61K47/14 ,  A61K47/54 ,  C07C69/587 ,  C11C3/02 ,  C11C3/08 ,  A23V2250/1866 ,  A23V2250/1578 ,  A23V2250/7044 ,  A23V2250/612 ,  A23V2250/5108 ,  A23V2250/5114

Abstract: A conjugated fatty acid glyceride, which is formed by converting conjugated fatty acids having conjugated double bond(s) in the molecule into glycerol esters, to more effectively exert the inherent physiological effects of the conjugated fatty acids and control the bitterness or astringency of the conjugated fatty acids, thereby making the conjugated fatty acids suitable for oral intake. These conjugated glycerides (for example, glycerides having conjugated-linoleic acid in the molecule) have effects of improving lipid metabolism, treating obesity and treating hypertension.

Abstract translation: 通过将分子中具有共轭双键的共轭脂肪酸转化成甘油酯形成的共轭脂肪酸甘油酯，以更有效地发挥共轭脂肪酸的固有生理作用，并控制共轭脂肪酸的辛酸或涩味 脂肪酸，从而使共轭脂肪酸适合口服摄入。 这些共轭甘油酯（例如，分子中具有共轭亚油酸的甘油酯）具有改善脂质代谢，治疗肥胖症和治疗高血压的作用。

公开(公告)号：US20060284944A1

公开(公告)日：2006-12-21

申请号：US10566173

申请日：2005-04-19

Applicant: Kiyomitsu Kudo ,  Akira Tsujimoto ,  Satoshi Kudo ,  Toru Suzuki

Inventor： Kiyomitsu Kudo ,  Akira Tsujimoto ,  Satoshi Kudo ,  Toru Suzuki

IPC: B41J2/175

CPC classification number: B41J2/17509 ,  B41J2/17513 ,  B41J2/1752 ,  B41J2/20

Abstract: The present invention solves problems attributable to color mixing occurring at a region where an ink container containing three or more different inks and an inkjet printing head are connected as a result of repetition of connection and disconnection of the components. An ink cartridge has a joint section which is connected to a printing head unit when the inks are supplied to the printing head unit. The printing head unit performs printing by ejecting the cyan, magenta, and yellow inks. At the joint section, a supplying part for the cyan ink, a supplying part for the magenta ink, and a supplying part for the yellow ink are arranged in the order listed. The interval between the yellow ink supplying part and the magenta ink supplying part is greater than the interval between the cyan ink supplying part and the magenta ink supplying part.

Abstract translation: 本发明解决了由于重复连接和断开组件而导致在包含三种或更多种不同油墨的墨水容器和喷墨打印头连接的区域上发生的颜色混合的问题。 墨盒具有接合部分，当将油墨供应到打印头单元时，其连接到打印头单元。 打印头单元通过喷射青色，品红色和黄色墨水来执行打印。 在接头部分，按照列出的顺序布置用于青色墨水的供应部分，用于品红色墨水的供应部分和用于黄色墨水的供应部件。 黄色供墨部分和品红色墨水供应部分之间的间隔大于青色墨水供应部分和品红色墨水供应部分之间的间隔。

公开(公告)号：US20050037579A1

公开(公告)日：2005-02-17

申请号：US10948262

申请日：2004-09-24

Applicant: Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

Inventor： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract translation: 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US06803281B2

公开(公告)日：2004-10-12

申请号：US10785103

申请日：2004-02-25

Applicant: Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

Inventor： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC: H01L21336

CPC classification number: H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

公开(公告)号：USD492962S1

公开(公告)日：2004-07-13

申请号：US29190895

申请日：2003-09-30

Applicant: Toru Suzuki ,  Akira Tsujimoto ,  Kiyomitsu Kudo ,  Satoshi Kudo ,  Hiroyuki Fukushima

Designer： Toru Suzuki ,  Akira Tsujimoto ,  Kiyomitsu Kudo ,  Satoshi Kudo ,  Hiroyuki Fukushima