Invention Grant
- Patent Title: Methods of fabricating nanoimprint stamp
- Patent Title (中): 制造纳米压印印章的方法
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Application No.: US13181660Application Date: 2011-07-13
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Publication No.: US08562842B2Publication Date: 2013-10-22
- Inventor: Du-hyun Lee , Byung-kyu Lee , Woong Ko
- Applicant: Du-hyun Lee , Byung-kyu Lee , Woong Ko
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0001090 20110105
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/02
Abstract:
A method of fabricating a nanoimprint stamp includes forming a resist pattern having a nano size width on a stamp substrate by performing imprint processes repeatedly. In the imprint processes, resist layers that are selectively etched are sequentially used. The stamp substrate is etched using the resist pattern as an etch mask.
Public/Granted literature
- US20120168404A1 METHODS OF FABRICATING NANOIMPRINT STAMP Public/Granted day:2012-07-05
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