- 专利标题: Film formation apparatus and film formation method
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申请号: US13613228申请日: 2012-09-13
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公开(公告)号: US08563333B2公开(公告)日: 2013-10-22
- 发明人: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Nishi
- 申请人: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Nishi
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2000-326278 20001026
- 主分类号: H01L33/02
- IPC分类号: H01L33/02
摘要:
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.
公开/授权文献
- US20130005054A1 Film Formation Apparatus and Film Formation Method 公开/授权日:2013-01-03