发明授权
US08563345B2 Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements
有权
结构稳定的隔离电容微加工超声波传感器（CMUT）阵列单元和阵列元件的集成
- 专利标题： Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements
- 专利标题（中）： 结构稳定的隔离电容微加工超声波传感器（CMUT）阵列单元和阵列元件的集成
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申请号： US13419216申请日： 2012-03-13
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公开(公告)号： US08563345B2公开(公告)日： 2013-10-22
- 发明人: Steven J. Adler , Peter Johnson , Gokhan Percin , Shahram Mostafazadeh
- 申请人： Steven J. Adler , Peter Johnson , Gokhan Percin , Shahram Mostafazadeh
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporated
- 当前专利权人： National Semiconductor Corporated
- 当前专利权人地址： US CA Santa Clara
- 代理商 Eugene Conser; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.
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