Invention Grant
US08563347B2 Method for producing a thin-film photovoltaic cell having an etchant-resistant electrode and an integrated bypass diode and a panel incorporating the same
失效
具有耐蚀刻电极和集成旁路二极管的薄膜光伏电池的制造方法以及包含其的面板的制造方法
- Patent Title: Method for producing a thin-film photovoltaic cell having an etchant-resistant electrode and an integrated bypass diode and a panel incorporating the same
- Patent Title (中): 具有耐蚀刻电极和集成旁路二极管的薄膜光伏电池的制造方法以及包含其的面板的制造方法
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Application No.: US13297563Application Date: 2011-11-16
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Publication No.: US08563347B2Publication Date: 2013-10-22
- Inventor: Meijun Lu , Lap-Tak Andrew Cheng
- Applicant: Meijun Lu , Lap-Tak Andrew Cheng
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L31/05
- IPC: H01L31/05
Abstract:
A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least first, second and third series-connected cells on a support, each cell being a laminated structure comprising a junction layer including semiconducting material of a first and second type, a front electrode formed of a transparent conductive oxide resistant to an etchant disposed in electrical contact with the semiconducting material of the first type, and a back electrode in electrical contact with the semiconducting material of the second type. A portion of both the back electrode and the junction layer are separated from a selected parent solar cell. Using the separated portion of the back electrode the semiconducting material of the second type of the separated portion of the junction layer is connected to the semiconducting material of the first type of any one chosen solar cell in the array.
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