Invention Grant
- Patent Title: Thin film transistor and method of fabricating the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US12887282Application Date: 2010-09-21
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Publication No.: US08563356B2Publication Date: 2013-10-22
- Inventor: Woo Seok Cheong , Sung Mook Chung , Jun Yong Bak
- Applicant: Woo Seok Cheong , Sung Mook Chung , Jun Yong Bak
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2009-0122990 20091211
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
Public/Granted literature
- US20110140097A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-06-16
Information query
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