公开(公告)号：US09019219B2

公开(公告)日：2015-04-28

申请号：US13546519

申请日：2012-07-11

申请人： Woo-Seok Cheong ,  Jaeheon Shin

发明人： Woo-Seok Cheong ,  Jaeheon Shin

IPC分类号： G06F3/041 ,  G06F3/044

CPC分类号： G06F3/044 ,  G06F2203/04103

摘要： Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked.

摘要翻译： 提供触摸屏面板。 触摸屏面板可以包括第一混合电极，第一混合电极包括在第一方向上布置在基板上的第一电极单元和在第一方向上将第一电极单元彼此连接的第一连接电极和与第一混合物间隔开的第二混合电极 电极。 第二混合电极可以包括沿与第一方向交叉的第二方向布置的第二电极单元和在第二方向上将第二电极单元彼此连接的第二连接电极。 第二电极单元设置在第一连接电极之间。 第一混合电极可以包括依次层叠的第一下透明层和第一金属层，第二混合电极可以包括依次层叠的第二下透明层和第二金属层。

公开(公告)号：US08563356B2

公开(公告)日：2013-10-22

申请号：US12887282

申请日：2010-09-21

申请人： Woo Seok Cheong ,  Sung Mook Chung ,  Jun Yong Bak

发明人： Woo Seok Cheong ,  Sung Mook Chung ,  Jun Yong Bak

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.

摘要翻译： 提供了一种薄膜晶体管及其制造方法，其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。 其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。

公开(公告)号：US20130133735A1

公开(公告)日：2013-05-30

申请号：US13614815

申请日：2012-09-13

申请人： Woo-Seok CHEONG ,  Rae-Man Park

发明人： Woo-Seok CHEONG ,  Rae-Man Park

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.

摘要翻译： 提供一种太阳能电池模块及其制造方法。 太阳能电池模块包括：基板; 在基板上不连续地形成的底部电极层; 形成在所述底部电极层上并包括暴露所述底部电极层的第一沟槽的光吸收层; 以及透明电极层，其从所述光吸收层的顶部延伸到所述第一沟槽的底部的所述底部电极层，并且包括第一氧化物层，金属层和第二氧化物层，所述第一氧化物层， 光吸收层和底电极层。

公开(公告)号：US20120298985A1

公开(公告)日：2012-11-29

申请号：US13475366

申请日：2012-05-18

申请人： Sung Mook CHUNG ,  Woo-Seok Cheong ,  Jaeheon Shin ,  Chan Hwa Hong

发明人： Sung Mook CHUNG ,  Woo-Seok Cheong ,  Jaeheon Shin ,  Chan Hwa Hong

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78693

摘要： Provided are a thin film transistor able to increase or maximize productivity and production yield, and a method of fabricating the same. The method of fabricating the thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer formed of an amorphous oxide semiconductor on the gate insulating layer, and respectively forming a source electrode and a drain electrode on both sides of the active layer above the gate electrode. The amorphous oxide semiconductor of the active layer may be doped with a metal oxide dielectric.

摘要翻译： 提供能够增加或最大化生产率和生产率的薄膜晶体管及其制造方法。 制造薄膜晶体管的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成由非晶氧化物半导体形成的有源层，分别形成源电极和 位于栅电极上方的有源层的两侧的漏电极。 有源层的无定形氧化物半导体可以掺杂有金属氧化物电介质。

公开(公告)号：US08095343B2

公开(公告)日：2012-01-10

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06F17/11

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

公开(公告)号：US20110272279A1

公开(公告)日：2011-11-10

申请号：US13184089

申请日：2011-07-15

申请人： Woo-Seok CHEONG ,  Seong-Jae LEE ,  Won-Ju Jo ,  Moon-Gyu JANG

发明人： Woo-Seok CHEONG ,  Seong-Jae LEE ,  Won-Ju Jo ,  Moon-Gyu JANG

IPC分类号： C23C14/34

CPC分类号： H01L21/67207 ,  H01L29/66848

摘要： In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, and subsequent processes can be performed in situ by using the two chambers, thereby the attachment of the unnecessary impurities and the formation of the oxide can be prevented and the optimization of the process can be accomplished.

摘要翻译： 在制造超精细半导体器件的方法中，提供了用于制造诸如肖特基势垒MOSFET的半导体器件的装置以及使用其制造半导体器件的方法。 两个腔室相互连接。 可以通过使用两个室来原位进行清洁处理，金属层形成工艺和随后的工艺，从而可以防止不必要的杂质的附着和氧化物的形成，并且可以实现工艺的优化。

公开(公告)号：US07757247B2

公开(公告)日：2010-07-13

申请号：US11288693

申请日：2005-11-29

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim ,  Kang Ho Park

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim ,  Kang Ho Park

IPC分类号： G11B7/24 ,  G11B23/03 ,  G11B3/70 ,  G11B5/84 ,  G11B7/26 ,  G11B5/82

CPC分类号： G11B23/0035

摘要： Provided is a small form factor optical/magnetic disk including an integrated metal hub and a disk plate. The integrated metal hub includes a circular upper metal hub and a circular lower metal hub integrally formed with and disposed under the upper metal hub. The circular lower metal hub has a smaller diameter smaller than the upper metal hub. A central hole is formed in central portions of the upper and lower metal hubs and passes through the upper and lower metal hubs. The disk plate has a through-hole that is formed in a central portion and is directly associated with the integrated metal hub, and a recess that is formed around the through-hole and allows the upper metal hub to be mounted therein. Since the central portion of the small form factor optical/magnetic disk is not thick, the small form factor optical/magnetic disk can contribute to an ultra thin small form factor information storage device. Also, since manufacturing processes are simple, price and quality competitiveness can be enhanced.

摘要翻译： 提供了包括集成金属毂和盘片的小型光学/磁盘。 集成金属毂包括圆形上金属毂和与上金属毂一体形成并设置在其下的圆形下金属毂。 圆形下部金属毂具有比上部金属毂更小的直径。 中心孔形成在上下金属轮毂的中心部分，并通过上下金属轮毂。 盘片具有形成在中心部分并且与集成金属毂直接相关联的通孔，以及形成在通孔周围并允许上金属毂安装在其中的凹部。 由于小型光学/磁盘的中心部分不厚，因此小型光学/磁盘可以有助于超薄型小尺寸信息存储装置。 此外，由于制造工艺简单，因此可以提高价格和质量竞争力。

公开(公告)号：US07384567B2

公开(公告)日：2008-06-10

申请号：US11015422

申请日：2004-12-20

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Doo Hee Cho ,  Jae Kwang Lee ,  Ki Chul Kim ,  Jeong Dae Suh

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Doo Hee Cho ,  Jae Kwang Lee ,  Ki Chul Kim ,  Jeong Dae Suh

IPC分类号： H01L21/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/20 ,  H01F41/308

摘要： Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.

摘要翻译： 提供一种制造薄膜磁头的方法。 特别地，提供一种制造薄膜磁头的方法，其中施加光致抗蚀剂的流动过程以分离硬磁性层和金属多层，并且使用光致抗蚀剂来使上电极与下电极绝缘 在制造磁再现装置中，从而简化和优化制造工艺并显着减少制造时间。

公开(公告)号：US20070136737A1

公开(公告)日：2007-06-14

申请号：US11483949

申请日：2006-07-10

申请人： Ho Jun Ryu ,  Yong Goo Yoo ,  Woo Seok Cheong ,  Eun Kyoung Kim ,  Mun Cheol Paek ,  Kwang Yong Kang

发明人： Ho Jun Ryu ,  Yong Goo Yoo ,  Woo Seok Cheong ,  Eun Kyoung Kim ,  Mun Cheol Paek ,  Kwang Yong Kang

IPC分类号： G11B7/24

CPC分类号： G11B23/0035

摘要： Provided are a hub for chucking an optical disk to a disk table of a recording/reproducing apparatus using a magnetic attraction force, and a small form factor optical disk for information storage including the hub. The hub is made of a magnetic metal-polymer composite material. The optical disk includes: a disk plate having a central through-hole and a recess, lower than an edge, formed around the through-hole; and a hub made of a magnetic metal-polymer composite material and inserted into the through-hole to be coupled to the disk plate.

摘要翻译： 提供了一种用于使用磁吸引力将光盘夹持到记录/再现装置的盘台的轮毂和用于包括轮毂的信息存储的小型光盘。 轮毂由磁性金属 - 聚合物复合材料制成。 光盘包括：具有中心通孔的盘片和形成在通孔周围的比边缘低的凹槽; 以及由磁性金属 - 聚合物复合材料制成并插入到通孔中以与盘片连接的毂。

公开(公告)号：US20060048706A1

公开(公告)日：2006-03-09

申请号：US10527056

申请日：2002-12-30

申请人： Woo-Seok Cheong ,  Seong-Jae Lee ,  Won-Ju Jo ,  Moon-Gyu Jang

发明人： Woo-Seok Cheong ,  Seong-Jae Lee ,  Won-Ju Jo ,  Moon-Gyu Jang

IPC分类号： C23C16/00

CPC分类号： H01L21/67207 ,  H01L29/66848

摘要： In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, and subsequent processes can be performed in situ by using the two chambers, thereby the attachment of the unnecessary impurities and the formation of the oxide can be prevented and the optimization of the process can be accomplished.

摘要翻译： 在制造超精细半导体器件的方法中，提供了用于制造诸如肖特基势垒MOSFET的半导体器件的装置以及使用其制造半导体器件的方法。 两个腔室相互连接。 可以通过使用两个室来原位进行清洁处理，金属层形成工艺和随后的工艺，从而可以防止不必要的杂质的附着和氧化物的形成，并且可以实现工艺的优化。