Invention Grant
- Patent Title: Power semiconductor device package and fabrication method
- Patent Title (中): 功率半导体器件封装及制造方法
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Application No.: US12479995Application Date: 2009-06-08
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Publication No.: US08563360B2Publication Date: 2013-10-22
- Inventor: Jun Lu , François Hébert , Kai Liu , Xiaotian Zhang
- Applicant: Jun Lu , François Hébert , Kai Liu , Xiaotian Zhang
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor, Inc.
- Current Assignee: Alpha and Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Schein & Cai LLP
- Agent James Cai
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A power semiconductor device package includes a conductive assembly including a connecting structure and a semiconductor die having an aperture formed therethrough, the aperture being sized and configured to spacedly receive the connecting structure. In an alternative embodiment, a power semiconductor device package includes a conductive assembly including a connecting structure and a pair of semiconductor die disposed on either side of the connecting structure in spaced relationship thereto.
Public/Granted literature
- US20100308454A1 POWER SEMICONDUCTOR DEVICE PACKAGE AND FABRICATION METHOD Public/Granted day:2010-12-09
Information query
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