公开(公告)号：US08846532B2

公开(公告)日：2014-09-30

申请号：US13621289

申请日：2012-09-16

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Tao Feng ,  Ming Sun

IPC分类号： H01L21/302

CPC分类号： B32B38/0012 ,  B32B2038/0016 ,  B32B2038/0092 ,  B32B2309/10 ,  B32B2457/14 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/0556 ,  H01L2224/05568 ,  H01L2224/06183 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16238 ,  H01L2224/17051 ,  H01L2224/17104 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/05552

摘要： A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls.

摘要翻译： 公开了一种用于超薄晶片背面处理的方法和装置。 该装置包括保持高温研磨和/或切割胶带以形成支撑结构的外圈。 超薄晶片或切片晶片粘附在环内用于晶片背面处理的带子上。 晶片背面处理包括离子注入，退火，蚀刻，溅射和蒸发，而晶片处于支撑结构中。 还公开了支撑结构的替代用途，包括制造具有金属化侧壁的模具。

公开(公告)号：US08402981B2

公开(公告)日：2013-03-26

申请号：US12522508

申请日：2008-02-11

申请人： Kai Liu

发明人： Kai Liu

IPC分类号： A45B11/00 ,  A45B23/00 ,  A45B25/00

CPC分类号： A45B23/00 ,  A45B17/00 ,  A45B19/04 ,  A45B2023/0012 ,  A45B2023/0037 ,  A45B2023/0075 ,  A45B2023/0081 ,  A45B2025/146

摘要： The invention relates to a protective element, especially a suspended protective element for using as a parasol or an umbrella, comprising a vertical pole, a protective cover element, and a holding structure connected to the vertical pole. The holding structure is rotatably mounted in relation to the vertical pole, and the rotational axis of the support extends at least approximately parallel to the longitudinal axis of the vertical pole.

摘要翻译： 本发明涉及一种保护元件，特别是用作遮阳伞或伞的悬挂保护元件，包括垂直杆，保护盖元件和连接到垂直杆的保持结构。 保持结构相对于垂直极可旋转地安装，并且支撑件的旋转轴线至少大致平行于垂直极的纵向轴线延伸。

公开(公告)号：US08207017B2

公开(公告)日：2012-06-26

申请号：US12290309

申请日：2008-10-29

申请人： Sanjay Havanur

发明人： Sanjay Havanur

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L25/074 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099

摘要： A method of fabricating a stacked dual MOSFET die package is disclosed. The method includes the steps of (a) forming a first conductive tab, (b) stacking a high side MOSFET die on the first conductive tab such that a drain contact of the high side MOSFET die is coupled to the first conductive tab, (c) stacking a second conductive tab in overlaying relationship to the high side MOSFET die such that a source contact of the high side MOSFET die is coupled to the second conductive tab, and (d) stacking a low side MOSFET die on the second conductive tab such that a drain contact of the low side MOSFET die is coupled to the second conductive tab.

摘要翻译： 公开了一种制造叠层双MOSFET晶片封装的方法。 该方法包括以下步骤：（a）形成第一导电突片，（b）在第一导电片上堆叠高边MOSFET管芯，使得高侧MOSFET管芯的漏极接头与第一导电接头连接，（c ）以与所述高侧MOSFET管芯重叠的关系堆叠第二导电接线片，使得所述高侧MOSFET管芯的源极接触耦合到所述第二导电接线片，以及（d）将所述第二导电接线片上的低侧MOSFET管芯堆叠 低边MOSFET管芯的漏极接触耦合到第二导电接头。

公开(公告)号：US08117661B2

公开(公告)日：2012-02-14

申请号：US11710656

申请日：2007-02-26

申请人： Weidong Zhang

发明人： Weidong Zhang

IPC分类号： G06F21/00

CPC分类号： G06F21/6218

摘要： A method and system for protecting silicon IPs from unauthorized use, transfer and sale, and for hiding confidential technology information contained in silicon IPs is described. The method and system create a content-encrypted silicon IP layout database from its original layout database. Both the layout database may be GDSII files, OASIS files, or other format layout database file, in which multiple records sequentially build the layout database. In accordance with one preferred embodiment, first, the original layout database is parsed and saved as sequential records in the memory. Next, the structure records, which construct structures in the original layout database, are selected from the saved records. Once the structure records have been selected, the data of the structure records may be compressed with using a public compressing method, and may be encrypted with using a public cryptography algorithm. Next, each byte of the data after compression and encryption is mapped to one or two printable ASCII characters for building up multiple new text element records in a new structure. Finally, the newly created structure records replace the selected structure records in the original layout database to create the content-encrypted silicon IP layout database.

摘要翻译： 描述了一种用于保护硅IP免受未经授权的使用，转移和销售以及隐藏硅IP内包含的机密技术信息的方法和系统。 该方法和系统从其原始布局数据库创建内容加密的硅IP布局数据库。 布局数据库可以是GDSII文件，OASIS文件或其他格式布局数据库文件，其中多个记录顺序地构建布局数据库。 根据一个优选实施例，首先，原始布局数据库被解析并作为顺序记录保存在存储器中。 接下来，从保存的记录中选择构建原始布局数据库中的结构的结构记录。 一旦选择了结构记录，结构记录的数据可以使用公共压缩方法进行压缩，并且可以使用公共密码算法进行加密。 接下来，压缩和加密后的数据的每个字节被映射到一个或两个可打印的ASCII字符，用于在新结构中构建多个新的文本元素记录。 最后，新创建的结构记录替换原始布局数据库中选定的结构记录，创建内容加密的硅IP布局数据库。

公开(公告)号：US07884696B2

公开(公告)日：2011-02-08

申请号：US12011489

申请日：2008-01-25

申请人： François Hébert ,  Tao Feng ,  Xiaotian Zhang ,  Jun Lu

发明人： François Hébert ,  Tao Feng ,  Xiaotian Zhang ,  Jun Lu

IPC分类号： H01F5/00

CPC分类号： H01F17/062

摘要： A lead frame-based discrete power inductor is disclosed. The power inductor includes top and bottom lead frames, the leads of which form a coil around a single closed-loop magnetic core. The coil includes interconnections between inner and outer contact sections of the top and bottom lead frames, the magnetic core being sandwiched between the top and bottom lead frames. Ones of the leads of the top and bottom lead frames have a generally non-linear, stepped configuration such that the leads of the top lead frame couple adjacent leads of the bottom lead frame about the magnetic core to form the coil.

公开(公告)号：US07649147B2

公开(公告)日：2010-01-19

申请号：US11900739

申请日：2007-09-14

申请人： Riming Xiao

发明人： Riming Xiao

IPC分类号： H01H19/00

CPC分类号： H01H9/0005

摘要： An off-circuit tap changer device which includes a spring-biased moving contact that is operable to independent flex and roll. The moving contact includes one or more rings which are independently spring biased to a moving contact support. The device also includes a single rod with locking elongated ribs to mate with a sleeve of the moving contact support. The circulating circuit includes X stationary contacts. The resiliency via the spring-biasing and the rolling of the ring minimizes, if not prevents, surface wearing of the moving contacts.

摘要翻译： 一种无回路分接开关装置，其包括弹性偏置的移动接触件，其可操作以独立地弯曲和滚动。 活动触点包括一个或多个环，其独立地弹簧偏置到移动接触支撑件。 该装置还包括具有锁定细长肋的单个杆，以与移动接触支撑件的套筒配合。 循环回路包括X固定触点。 通过弹簧偏置和环的滚动的弹性使活动触点的表面磨损最小化（如果不是防止的话）。

公开(公告)号：US07647953B2

公开(公告)日：2010-01-19

申请号：US11521538

申请日：2006-09-15

申请人： Gang Jin

发明人： Gang Jin

IPC分类号： B65B1/04 ,  B65D1/24

CPC分类号： F16N31/00

摘要： A system for reclaiming residual unspent automotive fluid having a fluid receiver which seats open containers of the automotive fluid in an inverted orientation to allow influences of gravity to self-drain the open containers. The fluid receiver accumulates the residual unspent automotive fluid into classifying compartments. Each compartment can be individually pumped or drained of the accumulated and stored residual automotive fluid.

摘要翻译： 一种用于回收具有流体接收器的残留未使用的汽车流体的系统，所述流体接收器以倒置的方向安置汽车流体的敞开的容器，以允许重力影响自我排放开放的容器。 流体接收器将剩余的未使用的汽车流体积聚到分级室中。 每个隔室可以单独泵送或排出累积和存储的残余汽车流体。

公开(公告)号：US07598620B2

公开(公告)日：2009-10-06

申请号：US11444977

申请日：2006-05-31

申请人： François Hébert ,  Anup Bhalla

发明人： François Hébert ,  Anup Bhalla

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A copper bonding compatible bond pad structure and associated method is disclosed. The device bond pad structure includes a buffering structure formed of regions of interconnect metal and regions of non-conductive passivation material, the buffering structure providing buffering of underlying layers and structures of the device.

摘要翻译： 公开了一种铜键合兼容的键合焊盘结构及其相关方法。 器件接合焊盘结构包括由互连金属的区域和非导电钝化材料的区域形成的缓冲结构，该缓冲结构为器件的下层和结构提供缓冲。

公开(公告)号：US07485954B2

公开(公告)日：2009-02-03

申请号：US11518546

申请日：2006-09-07

申请人： Sanjay Havanur

发明人： Sanjay Havanur

IPC分类号： H01L23/02

CPC分类号： H01L25/074 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099

摘要： A stacked dual MOSFET package is disclosed. The package includes a first conductive tab; a high side MOSFET die coupled to the first conductive tab such that a drain of the high side MOSFET die is electrically coupled to the first conductive tab; a second conductive tab electrically coupled to a source of the high side MOSFET die in overlaying relationship; a low side MOSFET die coupled to the second conductive tab such that a source of the low side MOSFET die is electrically coupled to the second conductive tab; a first lead coupled to a gate of the high side MOSFET die; at least one second lead coupled to the first conductive tab; at least one third lead coupled to a source of the low side MOSFET die; a fourth lead coupled to a gate of the low side MOSFET die; and an encapsulant covering portions of the first conductive tab, the high side MOSFET die, portions of the second conductive tab, the low side MOSFET die, and portions of the first lead, the at least one second lead, the at least one third lead, and the fourth lead.

摘要翻译： 公开了堆叠的双MOSFET封装。 包装包括第一导电片; 耦合到所述第一导电接线片的高侧MOSFET管芯，使得所述高侧MOSFET管芯的漏极电耦合到所述第一导电接头; 以重叠关系电耦合到所述高侧MOSFET管芯的源极的第二导电接线片; 耦合到所述第二导电接线片的低侧MOSFET管芯，使得所述低侧MOSFET管芯的源极电耦合到所述第二导电接头; 第一引线耦合到高边MOSFET晶体管的栅极; 耦合到所述第一导电片的至少一个第二引线; 耦合到所述低端MOSFET管芯的源极的至少一个第三引线; 第四引线耦合到低侧MOSFET管芯的栅极; 以及覆盖所述第一导电突片，所述高侧MOSFET管芯，所述第二导电突片的部分，所述低侧MOSFET管芯以及所述第一引线，所述至少一个第二引线，所述至少一个第三引线 ，第四个领先。

公开(公告)号：USD585276S1

公开(公告)日：2009-01-27

申请号：US29310232

申请日：2008-08-04

申请人： Carol Hsu

设计人： Carol Hsu