发明授权
- 专利标题： Fluorine depleted adhesion layer for metal interconnect structure
- 专利标题（中）： 用于金属互连结构的氟耗尽粘附层
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申请号： US13192120申请日： 2011-07-27
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公开(公告)号： US08563423B2公开(公告)日： 2013-10-22
- 发明人: Mukta G. Farooq , Emily R. Kinser
- 申请人： Mukta G. Farooq , Emily R. Kinser
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Katherine S. Brown, Esq.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.
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