Invention Grant
US08563435B2 Method of reducing damage to an electron beam inspected semiconductor substrate, and methods of inspecting a semiconductor substrate
有权
减少对电子束检查的半导体衬底的损伤的方法，以及检查半导体衬底的方法
- Patent Title: Method of reducing damage to an electron beam inspected semiconductor substrate, and methods of inspecting a semiconductor substrate
- Patent Title (中): 减少对电子束检查的半导体衬底的损伤的方法，以及检查半导体衬底的方法
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Application No.: US13615155Application Date: 2012-09-13
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Publication No.: US08563435B2Publication Date: 2013-10-22
- Inventor: David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
- Applicant: David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
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