Invention Grant
- Patent Title: Diffused integrated resistor
- Patent Title (中): 扩散集成电阻
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Application No.: US12667863Application Date: 2008-07-04
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Publication No.: US08564096B2Publication Date: 2013-10-22
- Inventor: Serge Pontarollo , Dominique Berger
- Applicant: Serge Pontarollo , Dominique Berger
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: The Noblitt Group, PLLC
- Priority: FR0756321 20070706
- International Application: PCT/EP2008/058660 WO 20080704
- International Announcement: WO2009/007314 WO 20090115
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
Methods and apparatus according to various aspects of the present invention may operate in conjunction with a resistor formed of a lightly-doped P-type region formed in a portion of a lightly-doped N-type semiconductor well extending on a lightly-doped P-type semiconductor substrate, the well being laterally delimited by a P-type wall extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area at the limit between the well and the substrate and, horizontally, by a heavily-doped N-type wall. A diode may be placed between a terminal of the resistor and the heavily-doped N-type wall, the cathode of the diode being connected to said terminal.
Public/Granted literature
- US20100253423A1 DIFFUSED INTEGRATED RESISTOR Public/Granted day:2010-10-07
Information query
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