发明授权
- 专利标题： Semiconductor apparatus having a through-hole interconnection
- 专利标题（中）： 具有通孔互连的半导体装置
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申请号： US12348988申请日： 2009-01-06
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公开(公告)号： US08564101B2公开(公告)日： 2013-10-22
- 发明人: Yoshimichi Harada , Masami Suzuki , Yoshihiro Nabe , Yuji Takaoka , Tatsuo Suemasu , Hideyuki Wada , Masanobu Saruta
- 申请人： Yoshimichi Harada , Masami Suzuki , Yoshihiro Nabe , Yuji Takaoka , Tatsuo Suemasu , Hideyuki Wada , Masanobu Saruta
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Sony Corporation,Fujikura Ltd.
- 当前专利权人： Sony Corporation,Fujikura Ltd.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2008-002553 20080109
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
A semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has another insulating layer formed in the via hole and a conductive layer formed thereon. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.