发明授权
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US13241769申请日： 2011-09-23
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公开(公告)号： US08564121B2公开(公告)日： 2013-10-22
- 发明人: Takumi Ihara , Seiji Ueno , Joji Fujimori , Yasunori Fujimoto
- 申请人： Takumi Ihara , Seiji Ueno , Joji Fujimori , Yasunori Fujimoto
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2010-279284 20101215
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/10
摘要：
A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.