Invention Grant
- Patent Title: Integrated circuit having electrostatic discharge protection
- Patent Title (中): 具有静电放电保护的集成电路
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Application No.: US13151898Application Date: 2011-06-02
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Publication No.: US08564917B2Publication Date: 2013-10-22
- Inventor: Wensong Chen , Stephen Beebe
- Applicant: Wensong Chen , Stephen Beebe
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
Apparatus are provided for integrated circuits that include circuitry to provide protection from electrostatic discharge. An exemplary integrated circuit includes an input/output terminal, a first transistor coupled to the input/output terminal, a second transistor coupled to a control terminal of the first transistor and a reference voltage node, and detection circuitry coupled to a control terminal of the second transistor. The detection circuitry is configured to turn on the second transistor in response to a discharge event to protect the first transistor.
Public/Granted literature
- US20120307405A1 INTEGRATED CIRCUIT HAVING ELECTROSTATIC DISCHARGE PROTECTION Public/Granted day:2012-12-06
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