发明授权
- 专利标题： Nonvolatile memory device and method for programming the same
- 专利标题（中）： 非易失性存储器件及其编程方法
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申请号： US13379463申请日： 2011-06-28
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公开(公告)号： US08565004B2公开(公告)日： 2013-10-22
- 发明人: Mitsuteru Iijima , Takeshi Takagi , Koji Katayama
- 申请人： Mitsuteru Iijima , Takeshi Takagi , Koji Katayama
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2010-148289 20100629
- 国际申请： PCT/JP2011/003670 WO 20110628
- 国际公布： WO2012/001944 WO 20120105
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).