Invention Grant
- Patent Title: Storage element and storage device
- Patent Title (中): 存储元件和存储设备
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Application No.: US13434478Application Date: 2012-03-29
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Publication No.: US08565013B2Publication Date: 2013-10-22
- Inventor: Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
- Applicant: Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2011-103683 20110506
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.
Public/Granted literature
- US20120281462A1 STORAGE ELEMENT AND STORAGE DEVICE Public/Granted day:2012-11-08
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