Invention Grant
- Patent Title: Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same
- Patent Title (中): 陶瓷基板上的多层薄膜电容器及其制造方法
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Application No.: US11736408Application Date: 2007-04-17
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Publication No.: US08569142B2Publication Date: 2013-10-29
- Inventor: Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- Applicant: Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- Applicant Address: CA Waterloo, Ontario
- Assignee: BlackBerry Limited
- Current Assignee: BlackBerry Limited
- Current Assignee Address: CA Waterloo, Ontario
- Agency: Guntin & Gust, PLC
- Agent Andrew Gust
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
Public/Granted literature
- US20070209201A1 MULTI-LEVEL THIN FILM CAPACITOR ON A CERAMIC SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2007-09-13
Information query
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