发明授权
- 专利标题： Doped electrodes for DRAM applications
- 专利标题（中）： 用于DRAM应用的掺杂电极
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申请号： US13915050申请日： 2013-06-11
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公开(公告)号： US08569819B1公开(公告)日： 2013-10-29
- 发明人: Xiangxin Rui , Hiroyuki Ode
- 申请人： Intermolecular, Inc. , Elpida Memory, Inc.
- 申请人地址： US CA San Jose JP Tokyo
- 专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人地址： US CA San Jose JP Tokyo
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/94 ; H01L21/8242 ; H01L21/329
摘要：
A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩcm. Advantageously, the electrode layers are conductive molybdenum oxide.
公开/授权文献
- US20130270673A1 DOPED ELECTRODES FOR DRAM APPLICATIONS 公开/授权日：2013-10-17
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