Invention Grant
- Patent Title: Transistor substrate dynamic biasing circuit
- Patent Title (中): 晶体管基板动态偏置电路
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Application No.: US13232529Application Date: 2011-09-14
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Publication No.: US08570096B2Publication Date: 2013-10-29
- Inventor: Julien Le Coz , Alexandre Valentian , Philippe Flatresse , Sylvain Engels
- Applicant: Julien Le Coz , Alexandre Valentian , Philippe Flatresse , Sylvain Engels
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1003656 20100914
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.
Public/Granted literature
- US20120062313A1 TRANSISTOR SUBSTRATE DYNAMIC BIASING CIRCUIT Public/Granted day:2012-03-15
Information query
IPC分类:
