Invention Grant
US08573469B2 Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
有权
用电绝缘层形成微型LED结构和微型LED结构阵列的方法
- Patent Title: Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
- Patent Title (中): 用电绝缘层形成微型LED结构和微型LED结构阵列的方法
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Application No.: US13436260Application Date: 2012-03-30
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Publication No.: US08573469B2Publication Date: 2013-11-05
- Inventor: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- Applicant: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: B23K31/00
- IPC: B23K31/00 ; B23K101/40 ; H01L33/46
Abstract:
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
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