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公开(公告)号：US09105492B2
公开(公告)日：2015-08-11
申请号：US13466966
申请日：2012-05-08
申请人： Andreas Bibl , John A. Higginson , Hsin-Hua Hu
发明人： Andreas Bibl , John A. Higginson , Hsin-Hua Hu
IPC分类号： G01P15/125 , H01L25/075 , H01L21/67 , H01L33/00
CPC分类号： B41J2/385 , B25J15/0052 , B25J15/0085 , B41J2/39 , B81B2201/038 , B81C99/002 , H01L21/67144 , H01L21/6835 , H01L24/75 , H01L24/83 , H01L24/97 , H01L25/0753 , H01L33/0079 , H01L2221/68322 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2224/29036 , H01L2224/29101 , H01L2224/2919 , H01L2224/7565 , H01L2224/7598 , H01L2224/83815 , H01L2224/83855 , H01L2224/97 , H01L2924/12041 , H01L2924/00 , H01L2224/83 , H01L2924/00014
摘要： A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.
摘要翻译： 公开了一种兼容的微器件传送头和头阵列。 在一个实施例中，微装置转移头包括可偏转到基底基板和弹簧部分之间的空间中的弹簧部分。
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公开(公告)号：US08809875B2
公开(公告)日：2014-08-19
申请号：US13372222
申请日：2012-02-13
CPC分类号： H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
摘要： A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
摘要翻译： 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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公开(公告)号：US20130300812A1
公开(公告)日：2013-11-14
申请号：US13466966
申请日：2012-05-08
申请人： Andreas Bibl , John A. Higginson , Hsin-Hua Hu
发明人： Andreas Bibl , John A. Higginson , Hsin-Hua Hu
IPC分类号： B41J2/385
CPC分类号： B41J2/385 , B25J15/0052 , B25J15/0085 , B41J2/39 , B81B2201/038 , B81C99/002 , H01L21/67144 , H01L21/6835 , H01L24/75 , H01L24/83 , H01L24/97 , H01L25/0753 , H01L33/0079 , H01L2221/68322 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2224/29036 , H01L2224/29101 , H01L2224/2919 , H01L2224/7565 , H01L2224/7598 , H01L2224/83815 , H01L2224/83855 , H01L2224/97 , H01L2924/12041 , H01L2924/00 , H01L2224/83 , H01L2924/00014
摘要： A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.
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4.发明授权Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer 有权用电绝缘层形成微型LED结构和微型LED结构阵列的方法公开(公告)号：US08573469B2
公开(公告)日：2013-11-05
申请号：US13436260
申请日：2012-03-30
IPC分类号： B23K31/00 , B23K101/40 , H01L33/46
CPC分类号： H01L33/08 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L27/156 , H01L33/0079 , H01L33/405 , H01L2224/7598 , H01L2224/83 , H01L2224/95145 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
摘要翻译： 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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公开(公告)号：US20130130416A1
公开(公告)日：2013-05-23
申请号：US13372292
申请日：2012-02-13
IPC分类号： H01L21/306
CPC分类号： H01L24/83 , B32B37/025 , B32B37/06 , B32B2457/20 , H01L21/67144 , H01L21/6833 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15153 , Y10T156/1153 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , H01L2224/83 , H01L2924/00
摘要： A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
摘要翻译： 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。
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公开(公告)号：US20140084240A1
公开(公告)日：2014-03-27
申请号：US13625825
申请日：2012-09-24
申请人： Hsin-Hua Hu , Andreas Bibl , John A. Higginson
发明人： Hsin-Hua Hu , Andreas Bibl , John A. Higginson
IPC分类号： H01L33/04
CPC分类号： H01L21/52 , H01L21/6835 , H01L21/6836 , H01L24/83 , H01L24/93 , H01L24/95 , H01L25/0753 , H01L25/50 , H01L27/156 , H01L33/0079 , H01L33/40 , H01L2221/6835 , H01L2224/95136 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/00
摘要： A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.
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7.发明授权公开(公告)号：US08518204B2
公开(公告)日：2013-08-27
申请号：US13436314
申请日：2012-03-30
CPC分类号： H01L24/83 , H01L21/67144 , H01L24/75 , H01L24/95 , H01L33/0079 , H01L33/46 , H01L2224/7598 , H01L2224/83 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , Y10T156/1153 , H01L2924/00
摘要： A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
摘要翻译： 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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公开(公告)号：US20130127020A1
公开(公告)日：2013-05-23
申请号：US13372277
申请日：2012-02-13
IPC分类号： H01L29/06
CPC分类号： H01L24/83 , B32B37/025 , B32B37/06 , B32B2457/20 , H01L21/67144 , H01L21/6833 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15153 , Y10T156/1153 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , H01L2224/83 , H01L2924/00
摘要： A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
摘要翻译： 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。
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公开(公告)号：US20130126891A1
公开(公告)日：2013-05-23
申请号：US13372222
申请日：2012-02-13
CPC分类号： H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
摘要： A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
摘要翻译： 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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10.发明授权Micro device transfer head heater assembly and method of transferring a micro device 有权微型设备传送头加热器组件和传送微型设备的方法公开(公告)号：US08349116B1
公开(公告)日：2013-01-08
申请号：US13372422
申请日：2012-02-13
CPC分类号： H01L29/167 , B32B38/18 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L24/97 , H01L25/0753 , H01L33/62 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2933/0066 , Y10T156/1153 , Y10T156/17 , Y10T156/1705 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , Y10T156/1911 , H01L2224/83 , H01L2924/00
摘要： A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.
摘要翻译： 公开了一种传送微型装置和微型装置阵列的方法。 承载连接到接合层的微型器件的载体衬底被加热到低于接合层的液相线温度的温度，并且转移头被加热到高于接合层的液相线温度的温度。 当微型装置与转印头接触时，来自转印头的热量转移到粘结层中以至少部分地熔化粘结层。 施加到转印头的电压产生从载体衬底拾取微器件的夹持力。
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