发明授权
- 专利标题： Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof
- 专利标题（中）： 具有提高光提取效率的半导体光电结构及其制造方法
-
申请号： US12836075申请日： 2010-07-14
-
公开(公告)号： US08574939B2公开(公告)日： 2013-11-05
- 发明人: Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
- 申请人： Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
- 申请人地址： TW Hsinchu Hsien
- 专利权人： Advanced Optoelectronic Technology, Inc.
- 当前专利权人： Advanced Optoelectronic Technology, Inc.
- 当前专利权人地址： TW Hsinchu Hsien
- 代理机构： Altis & Wispro Law Group, Inc.
- 优先权： TW98123854A 20090715
- 主分类号： H01L33/22
- IPC分类号： H01L33/22
摘要：
A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
公开/授权文献
信息查询
IPC分类:
