Invention Grant
- Patent Title: Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof
- Patent Title (中): 具有提高光提取效率的半导体光电结构及其制造方法
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Application No.: US12836075Application Date: 2010-07-14
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Publication No.: US08574939B2Publication Date: 2013-11-05
- Inventor: Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
- Applicant: Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis & Wispro Law Group, Inc.
- Priority: TW98123854A 20090715
- Main IPC: H01L33/22
- IPC: H01L33/22
Abstract:
A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
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