发明授权
- 专利标题： Method for manufacturing nonvolatile semiconductor memory element
- 专利标题（中）： 制造非易失性半导体存储元件的方法
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申请号： US13502769申请日： 2011-11-10
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公开(公告)号： US08574957B2公开(公告)日： 2013-11-05
- 发明人: Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima
- 申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2010-254314 20101112
- 国际申请： PCT/JP2011/006302 WO 20111110
- 国际公布： WO2012/063495 WO 20120518
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An object of the present invention is to provide a method for manufacturing a variable resistance nonvolatile semiconductor memory element which can operate at a low voltage and high speed when initial breakdown is caused, and inhibit oxidization of a contact plug. The method for manufacturing the variable resistance nonvolatile semiconductor memory element, which includes a bottom electrode, a variable resistance layer, and a top electrode which are formed above a contact plug, includes oxidizing to insulate an end portion of the variable resistance layer prior to forming a bottom electrode by patterning a first conductive film.
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