发明授权
- 专利标题： Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
- 专利标题（中）： 增加硅锗层中的锗浓度的方法和包括其的半导体器件的方法
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申请号： US13101659申请日： 2011-05-05
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公开(公告)号： US08574981B2公开(公告)日： 2013-11-05
- 发明人: Stefan Flachowsky , Thilo Scheiper , Peter Javorka , Jan Hoentschel
- 申请人： Stefan Flachowsky , Thilo Scheiper , Peter Javorka , Jan Hoentschel
- 申请人地址： KY Grand Cayman
- 专利权人： GlobalFoundries Inc.
- 当前专利权人： GlobalFoundries Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming layer of silicon germanium on a P-active region of a semiconducting substrate wherein the layer of silicon germanium has a first concentration of germanium, and performing an oxidation process on the layer of silicon germanium to increase a concentration of germanium in at least a portion of the layer of silicon germanium to a second concentration that is greater than the first concentration of germanium.
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