Invention Grant
- Patent Title: Method of manufacturing semiconductor device having metal gate
- Patent Title (中): 制造具有金属栅极的半导体器件的方法
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Application No.: US13033616Application Date: 2011-02-24
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Publication No.: US08574990B2Publication Date: 2013-11-05
- Inventor: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- Applicant: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
Public/Granted literature
- US20120220113A1 Method of Manufacturing Semiconductor Device Having Metal Gate Public/Granted day:2012-08-30
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