发明授权
- 专利标题： Method of manufacturing semiconductor device having metal gate
- 专利标题（中）： 制造具有金属栅极的半导体器件的方法
-
申请号： US13033616申请日： 2011-02-24
-
公开(公告)号： US08574990B2公开(公告)日： 2013-11-05
- 发明人: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- 申请人： Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
公开/授权文献
信息查询
IPC分类:
