发明授权
- 专利标题： Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same
- 专利标题（中）： 用于制造用于半导体结构的空腔结构的腔体结构的制造方法和由其制造的半导体麦克风
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申请号： US12979104申请日： 2010-12-27
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公开(公告)号： US08575037B2公开(公告)日： 2013-11-05
- 发明人: Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
- 申请人： Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
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