摘要:
An integrated circuit comprising an array of memory cells and a corresponding production method are described. Each memory cell comprises a resistively switching memory element and a vertical selection diode coupled to a selection line in a selection line trench for selecting one cell from the plurality of memory cells. A selection line is coupled to the vertical selection diode at one vertical sidewall of the selection line trench.
摘要:
An integrated circuit includes a field effect transistor formed in an active area segment of a semiconductor substrate. The transistor comprises: a first source/drain contact region including a first vertical extension and a second source/drain contact region including a second vertical extension and a channel region formed around a recessed channel transistor groove, the groove being formed in the active area segment and extending to a groove depth larger than a lower first contact region depth, wherein the second vertical extension of the second source/drain contact region is arranged above the first extension of the first source/drain contact region, and wherein the recessed channel transistor groove is filled with a conductive gate material at a groove depth lower than the first contact region depth.
摘要:
A method of manufacturing an integrated circuit includes forming landing pads in an array region of a substrate, individual ones of the landing pads being electrically coupled to individual ones of portions of devices formed in the substrate in the array region. The method also includes forming wiring lines within a peripheral region of the substrate. Forming the landing pads and forming the wiring lines includes a common lithographic process being effective in both the array and peripheral regions. The wiring lines and the landing pads of the integrated circuit are self-aligned.
摘要:
An integrated circuit includes a conductive line, the conductive line having a conductive layer made of a metal or a first compound including a metal and a capping layer made of a second compound comprising the metal, the capping layer being in contact with the conductive layer, the first compound being different from the second compound.
摘要:
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a memory cell region and at least one gate stack in a peripheral device region; forming caps made of one or more layers of a cap material over said plurality of gate stacks in said memory cell region and over said at least one gate stack in said peripheral device region; depositing a first protective layer made of carbon or made of a carbon containing material over said memory cell region and peripheral device region; forming a mask layer on said first protective layer in said memory cell region; exposing said cap of said at least one gate stack in said peripheral device region by removing said first protective layer in said peripheral device region in an etch step wherein said mask layer acts as a mask in said memory cell region; removing said mask layer and said first protective layer from said memory cell region; forming a first contact hole between two neighboring gate stacks in said memory cell region, said first contact hole exposing a contact area; forming at least one other contact hole in said peripheral device region, said at least one other contact hole exposing another contact area which is located either adjacent to said gate stack or in said gate stack in said peripheral device region; and filling said contact hole and said at least one other contact hole with a respective contact plug.
摘要:
Embodiments of the invention relate to an integrated circuit comprising a carrier, having a capacitor with a first electrode and a second electrode. The first electrode has a dielectric layer A layer sequence is arranged on the carrier, the capacitor being introduced in said layer sequence, wherein the layer sequence has a first supporting layer and a second supporting layer arranged at a distance above the first supporting layer, wherein the first and the second supporting layer adjoin the first electrode of the capacitor. Methods of manufacturing the integrated circuit are also provided.
摘要:
According to the invention, the method comprises the steps of: fabricating a first conductive layer including a first contact pad and covering the first conductive layer with a first protection layer at least on top of the first contact pad such that a first protective cap is formed thereon; fabricating a second conductive layer including a second contact pad, wherein the second conductive layer and the first conductive layer are electrically insulated from one another, and covering the second conductive layer with a second protection layer at least on top of the second contact pad such that a second protective cap is formed thereon; depositing at least one intermediate layer on top of the structure; forming a mask on top of the intermediate layer and etching the intermediate layer thereby exposing the first protective cap and the second protective cap, wherein an etchant is applied that provides a larger etch rate with regard to the intermediate layer than with regard to the protective layer; and after exposing the first and second protective caps, etching them and exposing the first and second contact pad during the same etch step.
摘要:
A memory device includes an array of memory cells and a storage capacitor for storing information. Each memory cell includes an access transistor. The access transistor includes first and second source/drain regions, a channel disposed between the first and the second source/drain regions, and a gate electrode electrically insulated from the channel and adapted to control the conductivity of the channel. The access transistor is at least partially formed in the semiconductor substrate. The storage capacitor is adapted to be accessed by the access transistor. The storage capacitor includes at least first and second storage electrodes and at least a capacitor dielectric disposed between the first and the second storage electrodes. Each of the first and the second storage electrodes is disposed above the substrate surface.
摘要:
One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.
摘要:
An integrated circuit including an array of memory cells and method. In one embodiment, each memory cell includes a resistively switching memory element and a selection diode for selecting one cell from the plurality of memory cells. The memory element is coupled with its top to a first selection line and with its bottom side to the selection diode, the diode further being coupled to the bottom side of a second selection line.