发明授权
- 专利标题： Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus
- 专利标题（中）： 制造半导体器件的方法和处理衬底和衬底处理设备的方法
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申请号： US13405750申请日： 2012-02-27
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公开(公告)号： US08575042B2公开(公告)日： 2013-11-05
- 发明人: Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
- 申请人： Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe And Koenig, P.C.
- 优先权： JP2011-041896 20110228; JP2012-019713 20120201
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.
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