公开(公告)号：US20120240348A1

公开(公告)日：2012-09-27

申请号：US13489018

申请日：2012-06-05

申请人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： B08B7/04 ,  B08B5/02

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

公开(公告)号：US08176871B2

公开(公告)日：2012-05-15

申请号：US11990445

申请日：2007-03-28

申请人： Kazuyuki Okuda ,  Norikazu Mizuno

发明人： Kazuyuki Okuda ,  Norikazu Mizuno

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  C23C16/46 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01L21/67109 ,  C23C16/45538 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/3141 ,  H01L21/3185 ,  Y10S427/106

摘要： Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

摘要翻译： 公开了一种基板处理装置，包括：处理空间，用于提供要处理基板的空间; 加热构件，用于加热处理空间; 气体供应构件，用于至少将第一和第二处理气体供应到处理空间; 排气构件，用于排出处理空间中的气氛; 以及控制构件，至少控制气体供给构件和排气构件，使得第一和第二处理气体的供给和排出交替重复多次，使得第一和第二处理气体彼此不混合 当在所述膜上涂覆处理空间的内壁的表面时，在所述基板上形成期望的膜以及所述第一处理气体和所述第二处理气体两者的处理空间被供给到所述处理空间。

公开(公告)号：US20120100722A1

公开(公告)日：2012-04-26

申请号：US13230869

申请日：2011-09-13

申请人： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

发明人： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

IPC分类号： H01L21/31 ,  C23C16/505

CPC分类号： C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

摘要： Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

摘要翻译： 公开了一种基板处理装置，包括：处理室; 多个缓冲室; 第一处理气体供应系统，其向所述处理室供应第一处理气体; 向缓冲室供给第二处理气体的第二处理气体供给系统; 射频电源; 缓冲室中的等离子体产生电极; 加热系统; 以及控制器，其控制第一和第二处理气体供应系统，电源和加热系统，以将其上具有金属膜的基板暴露于第一处理气体，以及在多个缓冲室中被激活的第二处理气体 对电极施加RF功率，并且从缓冲室供应到处理室，以在将衬底加热至第一处理气体的自分解温度或更低温度的同时在金属膜上形成膜。

公开(公告)号：US20080250619A1

公开(公告)日：2008-10-16

申请号：US12155625

申请日：2008-06-06

申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： H01L21/67

CPC分类号： C23C16/45523 ,  C23C16/345 ,  Y10T29/41

摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

摘要翻译： 通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体 并从反应室排出第二种气体，以处理设置在反应室中的基板。 第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

公开(公告)号：US20070292974A1

公开(公告)日：2007-12-20

申请号：US11664282

申请日：2006-01-27

申请人： Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Kazuyuki Okuda

发明人： Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Kazuyuki Okuda

IPC分类号： B05C11/00 ,  H01L21/00

CPC分类号： C23C16/45546 ,  C23C16/345 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141

摘要： Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.

摘要翻译： 公开了一种基板处理方法，其中多个处理气体被交替地供给到处理室并从其中排出，所述处理室形成要在其上处理基板或基板的空间，以在基板或每个基板上形成期望的薄膜 包括将衬底或衬底转移到处理室中，并且控制多个处理气体中的一个处理气体的供给时间以控制存在于薄膜中的化学物质的量以及薄膜应力所依赖的现有量 从而控制薄膜的薄膜应力。

公开(公告)号：US5668726A

公开(公告)日：1997-09-16

申请号：US357923

申请日：1994-12-16

申请人： Hiroshi Kondo ,  Takamasa Oguri ,  Masato Yano ,  Kazuyuki Okuda ,  Yoshihiro Kitagawa

发明人： Hiroshi Kondo ,  Takamasa Oguri ,  Masato Yano ,  Kazuyuki Okuda ,  Yoshihiro Kitagawa

IPC分类号： G05B19/042 ,  G11C11/4074 ,  G06F11/16

CPC分类号： G05B19/0428 ,  Y02P90/265

摘要： A backup RAM for storing pieces of diagnosis data regardless of the cut-off of an electric power is provided in a portion of a RAM. In cases where the detection of an unusual condition by a throttle sensor or a water temperature sensor is judged by a CPU in a current processing routine, a first checking value indicating that the backup RAM is in a renewing period is stored in a checking region of the backup RAM, and pieces of previous diagnosis data stored in a data access region of the backup RAM in a previous processing routine are copied to a temporary refuge region of the backup RAM. Thereafter, pieces of updated diagnosis data obtained in the current processing routine are stored one by one in the data access region in place of the previous diagnosis data, and a second checking value indicating that the backup RAM is in a renewal finishing period is stored in the checking region. In cases where the first checking data is stored in the checking region when the electric power cut off is again supplied, the previous diagnosis data stored in the temporary refuge region are returned to the data access region and are read out according to a request from a diagnosis checker.

摘要翻译： 在RAM的一部分中设置有用于存储断电的诊断数据的备用RAM。 在当前处理程序中CPU由CPU判断由油门传感器或水温传感器检测异常情况的情况下，表示备用RAM处于更新周期的第一检查值被存储在 备份RAM和存储在先前处理例程中的备份RAM的数据访问区域中的先前诊断数据被复制到备用RAM的临时避难区域。 此后，将当前处理程序中获得的更新的诊断数据片段逐个存储在数据访问区域中，而不是先前的诊断数据，并且存储指示备份RAM处于更新完成时段的第二检查值存储在 检查区域。 在再次提供电力切断时，在检查区域中存储第一检查数据的情况下，将存储在临时避难区域中的先前诊断数据返回到数据访问区域，并根据来自 诊断检查。

公开(公告)号：US08535479B2

公开(公告)日：2013-09-17

申请号：US13311634

申请日：2011-12-06

申请人： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

发明人： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

IPC分类号： H01L21/306

CPC分类号： C23C16/402 ,  C23C16/042 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3141 ,  H01L21/31608

摘要： Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.

摘要翻译： 提供了一种基板处理装置，包括：处理基板的处理室; 用于将Si材料，氧化材料和催化剂供应到处理室中的材料供应单元; 用于加热衬底的加热单元; 以及用于至少控制所述材料供应单元和所述加热单元的控制器，其中所述控制器被配置为控制所述加热单元以在低于第一光致抗蚀剂的变形温度的处理温度下形成的第一光致抗蚀剂图案来加热所述基板 构成第一光致抗蚀剂图案，并且控制材料供给单元交替地供给含硅材料和催化剂，并且以重复的方式将氧化材料和催化剂交替地供给到处理室中，以在基板上形成薄膜 其厚度等于第一光致抗蚀剂图案的一半间距的5％。

公开(公告)号：US08366868B2

公开(公告)日：2013-02-05

申请号：US13489018

申请日：2012-06-05

申请人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

公开(公告)号：US08261692B2

公开(公告)日：2012-09-11

申请号：US12823001

申请日：2010-06-24

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/509 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US08227346B2

公开(公告)日：2012-07-24

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/44

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。