发明授权
US08575592B2 Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
有权
具有多个量子阱结构的具有不同孔厚度的III族氮化物基发光二极管结构
- 专利标题： Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
- 专利标题（中）： 具有多个量子阱结构的具有不同孔厚度的III族氮化物基发光二极管结构
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申请号： US12699541申请日： 2010-02-03
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公开(公告)号： US08575592B2公开(公告)日： 2013-11-05
- 发明人: Michael John Bergmann , Daniel Carleton Driscoll , Ashonita Chavan , Pablo Cantu-Alejandro , James Ibbotson
- 申请人： Michael John Bergmann , Daniel Carleton Driscoll , Ashonita Chavan , Pablo Cantu-Alejandro , James Ibbotson
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
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