- 专利标题： Graphene electronic device and method of fabricating the same
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申请号： US13224941申请日： 2011-09-02
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公开(公告)号： US08575665B2公开(公告)日： 2013-11-05
- 发明人: Jin-seong Heo , Hyun-jong Chung , Sun-ae Seo , Sung-hoon Lee , Hee-jun Yang
- 申请人： Jin-seong Heo , Hyun-jong Chung , Sun-ae Seo , Sung-hoon Lee , Hee-jun Yang
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0032192 20110407
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/78
摘要：
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
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