Invention Grant
US08575753B2 Semiconductor device having a conductive structure including oxide and non oxide portions
有权
具有包括氧化物和非氧化物部分的导电结构的半导体器件
- Patent Title: Semiconductor device having a conductive structure including oxide and non oxide portions
- Patent Title (中): 具有包括氧化物和非氧化物部分的导电结构的半导体器件
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Application No.: US12787056Application Date: 2010-05-25
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Publication No.: US08575753B2Publication Date: 2013-11-05
- Inventor: Suk-hun Choi , Ki-ho Bae , Yi-koan Hong , Kyung-hyun Kim , Tae-hyun Kim , Kyung-tae Nam , Jun-ho Jeong
- Applicant: Suk-hun Choi , Ki-ho Bae , Yi-koan Hong , Kyung-hyun Kim , Tae-hyun Kim , Kyung-tae Nam , Jun-ho Jeong
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0046383 20090527; KR10-2009-0110694 20091117
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.
Public/Granted literature
- US20100301480A1 SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE STRUCTURE Public/Granted day:2010-12-02
Information query
IPC分类:
