发明授权
- 专利标题: Memory with regulated ground nodes
- 专利标题(中): 具有受调节接地节点的存储器
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申请号: US12832320申请日: 2010-07-08
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公开(公告)号: US08576611B2公开(公告)日: 2013-11-05
- 发明人: Kuoyuan (Peter) Hsu , Yukit Tang , Derek Tao , Young Seog Kim
- 申请人: Kuoyuan (Peter) Hsu , Yukit Tang , Derek Tao , Young Seog Kim
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Some embodiments regard a memory array comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; wherein a column of the plurality of columns includes a column ground node; at least two voltage sources configured to be selectively coupled to the column ground node; and a plurality of memory cells having a plurality of internal ground nodes electrically coupled together and to the column ground node.
公开/授权文献
- US20120008376A1 MEMORY WITH REGULATED GROUND NODES 公开/授权日:2012-01-12
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