发明授权
US08576630B2 Non-volatile memory device with plural reference cells, and method of setting the reference cells
有权
具有多个参考单元的非易失性存储器件，以及设置参考单元的方法
- 专利标题： Non-volatile memory device with plural reference cells, and method of setting the reference cells
- 专利标题（中）： 具有多个参考单元的非易失性存储器件，以及设置参考单元的方法
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申请号： US13466872申请日： 2012-05-08
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公开(公告)号： US08576630B2公开(公告)日： 2013-11-05
- 发明人: Xian Liu , Michael James Heinz , Eugene Jinglun Tam , Michael K. Doan , Alexander Kotov , Tho Ngoc Dang , Jack Edward Frayer , Jung Hee Yun , Thuan T. Vu
- 申请人： Xian Liu , Michael James Heinz , Eugene Jinglun Tam , Michael K. Doan , Alexander Kotov , Tho Ngoc Dang , Jack Edward Frayer , Jung Hee Yun , Thuan T. Vu
- 申请人地址： US CA San Jose
- 专利权人： Silicon Storage Technology, Inc.
- 当前专利权人： Silicon Storage Technology, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： DLA Piper LLP (US)
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.