发明授权
US08576634B2 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group
有权
半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
- 专利标题： Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group
- 专利标题（中）： 半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
-
申请号： US12764090申请日： 2010-04-20
-
公开(公告)号： US08576634B2公开(公告)日： 2013-11-05
- 发明人: Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
- 申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2004-284123 20040929
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; H01L29/792
摘要：
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
公开/授权文献
- US20100202205A1 SEMICONDUCTOR DEVICE 公开/授权日：2010-08-12
信息查询
