Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13368461Application Date: 2012-02-08
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Publication No.: US08576643B2Publication Date: 2013-11-05
- Inventor: Yutaka Shinagawa , Takeshi Kataoka , Eiichi Ishikawa , Toshihiro Tanaka , Kazumasa Yanagisawa , Kazufumi Suzukawa
- Applicant: Yutaka Shinagawa , Takeshi Kataoka , Eiichi Ishikawa , Toshihiro Tanaka , Kazumasa Yanagisawa , Kazufumi Suzukawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor integrated circuit has a central processing unit and a rewritable nonvolatile memory area disposed in an address space of the central processing unit. The nonvolatile memory area has a first nonvolatile memory area and a second nonvolatile memory area, which memorize information depending on the difference of threshold voltages. The first nonvolatile memory area has a maximum variation width of a threshold voltage for memorizing an information set larger than that of the second nonvolatile memory area. The first nonvolatile memory area can be prioritized to expedite a read speed of the memory information, and the second nonvolatile memory area can be prioritized to guarantee the number of times of rewrite operation of memory information.
Public/Granted literature
- US20120179953A1 Semiconductor Integrated Circuit Public/Granted day:2012-07-12
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