- 专利标题: Method and apparatus of pattern inspection and semiconductor inspection system using the same
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申请号: US13344409申请日: 2012-01-05
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公开(公告)号: US08577124B2公开(公告)日: 2013-11-05
- 发明人: Yasutaka Toyoda , Akiyuki Sugiyama , Ryoichi Matsuoka , Takumichi Sutani , Hidemitsu Naya
- 申请人: Yasutaka Toyoda , Akiyuki Sugiyama , Ryoichi Matsuoka , Takumichi Sutani , Hidemitsu Naya
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-177121 20050617
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G21K7/00 ; G06F17/50
摘要:
A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
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