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1.发明授权Method and apparatus of pattern inspection and semiconductor inspection system using the same 有权图案检查方法和装置以及使用其的半导体检查系统公开(公告)号：US08115169B2
公开(公告)日：2012-02-14
申请号：US12388968
申请日：2009-02-19
CPC分类号： G06T7/0006 , G06T2207/30148 , H01J2237/221 , H01J2237/2817
摘要： A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要翻译： 例如，可以在扫描型电子显微镜系统中设置图案检查装置。 当在SEM图像中包含多层图案时，该装置通过使用与图案相对应的多个层的设计数据，根据每层分离图案。 因此，该装置可以仅使用要检查的目标层的图案，不同层的图案检查或层之间的位置偏移的检测来实现检查。
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2.发明申请METHOD AND APPARATUS OF PATTERN INSPECTION AND SEMICONDUCTOR INSPECTION SYSTEM USING THE SAME 有权使用该图案的图案检查和半导体检测系统的方法和装置公开(公告)号：US20090152463A1
公开(公告)日：2009-06-18
申请号：US12388968
申请日：2009-02-19
CPC分类号： G06T7/0006 , G06T2207/30148 , H01J2237/221 , H01J2237/2817
摘要： A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要翻译： 例如，可以在扫描型电子显微镜系统中设置图案检查装置。 当在SEM图像中包含多层图案时，该装置通过使用与图案相对应的多个层的设计数据，根据每层分离图案。 因此，该装置可以仅使用要检查的目标层的图案，不同层的图案检查或层之间的位置偏移的检测来实现检查。
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3.发明申请Method and apparatus of pattern inspection and semiconductor inspection system using the same 有权图案检查方法和装置以及使用其的半导体检查系统公开(公告)号：US20070023653A1
公开(公告)日：2007-02-01
申请号：US11453229
申请日：2006-06-15
IPC分类号： G21K7/00
CPC分类号： G06T7/0006 , G06T2207/30148 , H01J2237/221 , H01J2237/2817
摘要： A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要翻译： 例如，可以在扫描型电子显微镜系统中设置图案检查装置。 当在SEM图像中包含多层图案时，该装置通过使用与图案相对应的多个层的设计数据来分离根据每一层的图案。 因此，该装置可以仅使用要检查的目标层的图案，不同层的图案检查或层之间的位置偏移的检测来实现检查。
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4.发明授权公开(公告)号：US08577124B2
公开(公告)日：2013-11-05
申请号：US13344409
申请日：2012-01-05
CPC分类号： G06T7/0006 , G06T2207/30148 , H01J2237/221 , H01J2237/2817
摘要： A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
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5.发明授权Method and apparatus of pattern inspection and semiconductor inspection system using the same 有权图案检查方法和装置以及使用其的半导体检查系统公开(公告)号：US07507961B2
公开(公告)日：2009-03-24
申请号：US11453229
申请日：2006-06-15
CPC分类号： G06T7/0006 , G06T2207/30148 , H01J2237/221 , H01J2237/2817
摘要： A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要翻译： 例如，可以在扫描型电子显微镜系统中设置图案检查装置。 当在SEM图像中包含多层图案时，该装置通过使用与图案相对应的多个层的设计数据，根据每层分离图案。 因此，该装置可以仅使用要检查的目标层的图案，不同层的图案检查或层之间的位置偏移的检测来实现检查。
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6.发明申请SAMPLE DIMENSION INSPECTING/MEASURING METHOD AND SAMPLE DIMENSION INSPECTING/MEASURING APPARATUS 有权样本尺寸检查/测量方法和样品尺寸检查/测量装置公开(公告)号：US20110158543A1
公开(公告)日：2011-06-30
申请号：US13041894
申请日：2011-03-07
IPC分类号： G06K9/00
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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7.发明授权Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus 有权样品尺寸检测/测量方法和样品尺寸检测/测量仪器公开(公告)号：US08338804B2
公开(公告)日：2012-12-25
申请号：US13041894
申请日：2011-03-07
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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8.发明授权Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus 有权样品尺寸检测/测量方法和样品尺寸检测/测量仪器公开(公告)号：US07923703B2
公开(公告)日：2011-04-12
申请号：US12279564
申请日：2007-02-09
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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9.发明申请SAMPLE DIMENSION INSPECTING/MEASURING METHOD AND SAMPLE DIMENSION INSPECTING/MEASURING APPARATUS 有权样本尺寸检查/测量方法和样品尺寸检查/测量装置公开(公告)号：US20090218491A1
公开(公告)日：2009-09-03
申请号：US12279564
申请日：2007-02-09
IPC分类号： G01N23/00
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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公开(公告)号：US07679055B2
公开(公告)日：2010-03-16
申请号：US11892675
申请日：2007-08-24
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/10056 , G06T2207/30148
摘要： An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要翻译： 提供了一种评估方法和装置，用于通过使用表示叠加的多个图案的设计数据来理想地评估图案图案的图案之间的位移。 对于设计数据的线段和带电粒子辐射图像的边缘之间的上层图案测量第一距离，测量设计数据的线段与设计数据的边缘之间的较低层图案的第二距离 带电粒子辐射图像; 并且根据第一距离和第二距离在上层图案和下层图案之间检测叠加位移。
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