发明授权
- 专利标题： Metal oxide semiconductor transistor and method of manufacturing the same
- 专利标题（中）： 金属氧化物半导体晶体管及其制造方法
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申请号： US13188536申请日： 2011-07-22
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公开(公告)号： US08580625B2公开(公告)日： 2013-11-12
- 发明人: Tsuo-Wen Lu , Tzung-Ying Lee , Jei-Ming Chen , Chun-Wei Hsu , Yu-Min Lin , Chia-Lung Chang , Chin-Cheng Chien , Shu-Yen Chan
- 申请人： Tsuo-Wen Lu , Tzung-Ying Lee , Jei-Ming Chen , Chun-Wei Hsu , Yu-Min Lin , Chia-Lung Chang , Chin-Cheng Chien , Shu-Yen Chan
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.