发明授权
US08581247B2 Flexible semiconductor device having gate electrode disposed within an opening of a resin film
有权
具有设置在树脂膜的开口内的栅电极的柔性半导体器件
- 专利标题： Flexible semiconductor device having gate electrode disposed within an opening of a resin film
- 专利标题（中）： 具有设置在树脂膜的开口内的栅电极的柔性半导体器件
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申请号： US13256457申请日： 2010-02-02
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公开(公告)号： US08581247B2公开(公告)日： 2013-11-12
- 发明人: Takeshi Suzuki , Kenichi Hotehama , Seiichi Nakatani , Koichi Hirano , Tatsuo Ogawa
- 申请人： Takeshi Suzuki , Kenichi Hotehama , Seiichi Nakatani , Koichi Hirano , Tatsuo Ogawa
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2009-084542 20090331
- 国际申请： PCT/JP2010/000597 WO 20100202
- 国际公布： WO2010/113376 WO 20101007
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/12 ; H01L21/02
摘要：
There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
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