Invention Grant
- Patent Title: Photoelectric device having group III nitride semiconductor
- Patent Title (中): 具有III族氮化物半导体的光电器件
-
Application No.: US13015590Application Date: 2011-01-28
-
Publication No.: US08581283B2Publication Date: 2013-11-12
- Inventor: Po-Min Tu , Shih-Cheng Huang , Wen-Yu Lin , Chih-Peng Hsu , Shih-Hsiung Chan
- Applicant: Po-Min Tu , Shih-Cheng Huang , Wen-Yu Lin , Chih-Peng Hsu , Shih-Hsiung Chan
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis & Wispro Law Group, Inc.
- Priority: TW97115512A 20080428
- Main IPC: H01L33/10
- IPC: H01L33/10
Abstract:
A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
Public/Granted literature
- US20110114983A1 PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR Public/Granted day:2011-05-19
Information query
IPC分类:
