Invention Grant
- Patent Title: High temperature embedded charge devices and methods thereof
- Patent Title (中): 高温嵌入式充电器件及其方法
-
Application No.: US11059882Application Date: 2005-02-17
-
Publication No.: US08581308B2Publication Date: 2013-11-12
- Inventor: Michael D. Potter
- Applicant: Michael D. Potter
- Applicant Address: US NY Rochester
- Assignee: Rochester Institute of Technology
- Current Assignee: Rochester Institute of Technology
- Current Assignee Address: US NY Rochester
- Agency: Bond Schoeneck & King, PLLC
- Agent Joseph M. Noto
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
A device for storing embedded charge includes a first insulator and at least one second insulator. The first insulator has at least two outer surfaces and has a band gap of less than about 5.5 eV. The second insulator is deposited on at least each of the at least two outer surfaces of the first insulator to form at least one interface for storing charge between the first and second insulators. The second insulator has a band gap of more than about 6.0 eV.
Public/Granted literature
- US20050205966A1 High Temperature embedded charge devices and methods thereof Public/Granted day:2005-09-22
Information query
IPC分类:
