Invention Grant
- Patent Title: Enhanced non-noble electrode layers for DRAM capacitor cell
- Patent Title (中): 用于DRAM电容器电池的增强型非贵金属电极层
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Application No.: US13737209Application Date: 2013-01-09
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Publication No.: US08581318B1Publication Date: 2013-11-12
- Inventor: Hanhong Chen , Wim Deweerd , Edward L. Haywood , Sandra G. Malhotra , Hiroyuki Ode
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A metal oxide first electrode material for a MIM DRAM capacitor is formed wherein the first and/or second electrode materials or structures contain layers having one or more dopants up to a total doping concentration that will not prevent the electrode materials from crystallizing during a subsequent anneal step. Advantageously, the electrode doped with one or more of the dopants has a work function greater than about 5.0 eV. Advantageously, the electrode doped with one or more of the dopants has a resistivity less than about 1000 μΩcm. Advantageously, the electrode materials are conductive molybdenum oxide.
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