Invention Grant
- Patent Title: Semiconductor device with transistor local interconnects
- Patent Title (中): 具有晶体管局部互连的半导体器件
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Application No.: US13324699Application Date: 2011-12-13
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Publication No.: US08581348B2Publication Date: 2013-11-12
- Inventor: Mahbub Rashed , Steven Soss , Jongwook Kye , Irene Y. Lin , James Benjamin Gullette , Chinh Nguyen , Jeff Kim , Marc Tarabbia , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant: Mahbub Rashed , Steven Soss , Jongwook Kye , Irene Y. Lin , James Benjamin Gullette , Chinh Nguyen , Jeff Kim , Marc Tarabbia , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/70 ; H01L21/02
Abstract:
A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer.
Public/Granted literature
- US20130146982A1 SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS Public/Granted day:2013-06-13
Information query
IPC分类:
