Invention Grant
- Patent Title: Semiconductor device with heat dissipation
- Patent Title (中): 半导体器件散热
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Application No.: US13442015Application Date: 2012-04-09
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Publication No.: US08581390B2Publication Date: 2013-11-12
- Inventor: Edward O. Travis , Douglas M. Reber , Mehul D. Shroff
- Applicant: Edward O. Travis , Douglas M. Reber , Mehul D. Shroff
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; James L. Clingan, Jr.
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/10

Abstract:
A semiconductor assembly includes a semiconductor device and a connecting structure. The semiconductor device includes an interconnect region over a semiconductor substrate and a pillar layer having a plurality of pillar contacts on the interconnect region. The pillar layer also includes a plurality of radial heat conductors that have at least a portion overlying a heat source that is within and overlies the semiconductor substrate. Each radial heat conductor extends a length radially from the heat source that is at least twice as great as the diameter of the pillars. The connecting structure includes a connecting substrate that supports a first corresponding pillar contact that is in contact with a first pillar contact of the plurality of pillar contacts. The first connecting structure further includes a heat conductor, supported by the substrate, in contact with a first radial heat conductor of the plurality of radial heat conductors.
Public/Granted literature
- US20130264698A1 SEMICONDUCTOR DEVICE WITH HEAT DISSIPATION Public/Granted day:2013-10-10
Information query
IPC分类: