发明授权
- 专利标题： Double solid metal pad with reduced area
- 专利标题（中）： 双面实心金属垫，面积减小
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申请号： US12272501申请日： 2008-11-17
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公开(公告)号： US08581423B2公开(公告)日： 2013-11-12
- 发明人: Hsien-Wei Chen , Yu-Wen Liu , Hao-Yi Tsai , Shin-Puu Jeng , Ying-Ju Chen
- 申请人： Hsien-Wei Chen , Yu-Wen Liu , Hao-Yi Tsai , Shin-Puu Jeng , Ying-Ju Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/48 ; H01L29/40
摘要：
An integrated circuit structure includes a bond pad; an Mtop pad located directly underlying the bond pad; an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal dimension of the bond pad; a plurality of vias interconnecting the Mtop pad and the Mtop-1 pad; and a bond ball on the bond pad. Each of the Mtop pad and the Mtop-1 pad has positive enclosures to the bond ball in all horizontal directions.
公开/授权文献
- US20100123246A1 Double Solid Metal Pad with Reduced Area 公开/授权日：2010-05-20
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