发明授权
- 专利标题： Double biasing for trilayer MR sensors
- 专利标题（中）： 用于三层MR传感器的双偏置
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申请号： US12631183申请日： 2009-12-04
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公开(公告)号： US08582250B2公开(公告)日： 2013-11-12
- 发明人: Jiaoming Qiu , Yonghua Chen , Kaizhong Gao
- 申请人： Jiaoming Qiu , Yonghua Chen , Kaizhong Gao
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Hall Estill Attorneys at Law
- 主分类号： G11B5/33
- IPC分类号： G11B5/33 ; G11B5/127
摘要：
A trilayer magnetoresistive sensor has at least first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.
公开/授权文献
- US20110134572A1 DOUBLE BIASING FOR TRILAYER MR SENSORS 公开/授权日：2011-06-09
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